Ferroelectric capped magnetization in multiferroic PZT/LSMO tunnel junctions

Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface

Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface" (2015). Alexei Gruverman Publications. Paper 61. As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between tw...

Multiferroic tunnel junctions with poly(vinylidene fluoride)

Giant Electroresistance in Ferroelectric Tunnel Junctions

Functional ferroelectric tunnel junctions on silicon

The quest for solid state non-volatility memory devices on silicon with high storage density, high speed, low power consumption has attracted intense research on new materials and novel device architectures. Although flash memory dominates in the non-volatile memory market currently, it has drawbacks, such as low operation speed, and limited cycle endurance, which prevents it from becoming the ...

Ferroelectric tunnel junctions with graphene electrodes.

Polarization-driven resistive switching in ferroelectric tunnel junctions (FTJs)--structures composed of two electrodes separated by an ultrathin ferroelectric barrier--offers new physics and materials functionalities, as well as exciting opportunities for the next generation of non-volatile memories and logic devices. Performance of FTJs is highly sensitive to the electrical boundary condition...